40N10 Просмотр технического описания (PDF) - Inchange Semiconductor

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40N10

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

40N10

·FEATURES

·Drain Current ID= 40A@ TC=25℃

·Drain Source Voltage-

: VDSS= 100V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.04Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching power supplies,converters,AC and DC motor controls

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

Drain-Source Voltage

Gate-Source Voltage-Continuous

100

V

±30

V

ID

Drain Current-Continuous

40

A

IDM

Drain Current-Single Plused

100

A

PD

Total Dissipation @TC=25℃

150

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

0.833 ℃/W

Thermal Resistance, Junction to Ambient 62.5 ℃/W

isc website：www.iscsemi.cn

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