NGTB15N120FL2W/D(2015) Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге

Компоненты Описание

производитель

NGTB15N120FL2W/D
(Rev.:2015)

IGBT - Field Stop II

ON Semiconductor 

NGTB15N120FL2WG

TYPICAL CHARACTERISTICS

1

50% Duty Cycle

20%

0.1 10%

5%

2%

0.01

0.001

Single Pulse

0.0001

0.000001

0.00001

RqJC = 0.51

0.0001

Junction R1

C1

R2

Rn Case Ri (°C/W) Ci (J/°C)

0.091186 0.003468

0.066118 0.015124

0.083897 0.037692

0.201027 0.049745

C2

Cn

0.072182 0.438100

Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC

0.001

0.01

0.1

1

ON−PULSE WIDTH (s)

Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response

1

50% Duty Cycle

RqJC = 0.81

20%

10%

0.1

5%

2%

Single Pulse

0.01

0.000001

0.00001

Junction R1 R2

C1 C2

Duty Factor = t1/t2

Peak TJ = PDM x ZqJC + TC

0.0001

0.001

0.01

ON−PULSE WIDTH (s)

Ri (°C/W) Ci (J/°C)

0.017316 0.000058

Rn Case 0.022798 0.000439

0.025844 0.001224

0.064579 0.001548

0.117833 0.002684

0.076569 0.013060

Cn

0.059662 0.053003

0.154481 0.064733

0.230902 0.136953

0.042811 2.335824

0.1

1

Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response

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