MMBTA92LT1 Просмотр технического описания (PDF) - Motorola => Freescale

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MMBTA92LT1

PNP Silicon High Voltage transistors

Motorola => Freescale 

MMBTA92LT1 MMBTA93LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(3)

DC Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc)

(IC = –10 mAdc, VCE = –10 Vdc)

hFE

—

Both Types

25

—

Both Types

40

—

(IC = –30 mAdc, VCE = –10 Vdc)

Collector – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

Base–Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)

v v 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

MMBTA92

MMBTA93

MMBTA92

MMBTA93

25

25

VCE(sat)

—

—

VBE(sat)

—

—

—

Vdc

–0.5

–0.5

–0.9

Vdc

MMBTA92

MMBTA93

fT

50

Ccb

—

—

—

MHz

pF

6.0

8.0

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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