BTS432D2 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BTS432D2

Smart Highside Power Switch

Infineon Technologies 

Electrical Characteristics

Parameter and Conditions

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

BTS 432 D2

Symbol

Values

Unit

min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 2 A

Tj=25 °C: RON

Tj=150 °C:

Nominal load current (pin 3 to 5)

ISO Proposal: VON = 0.5 V, TC = 85 °C

Output current (pin 5) while GND disconnected or

GND pulled up, VIN= 0, see diagram page 7,

Tj =-40...+150°C

Turn-on time

to 90% VOUT:

Turn-off time

RL = 12 Ω, Tj =-40...+150°C

to 10% VOUT:

Slew rate on

10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C

Slew rate off

70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C

IL(ISO)

IL(GNDhigh)

ton

toff

dV /dton

-dV/dtoff

-- 30 38 mΩ

55 70

9 11

-- A

--

--

1 mA

50 160 300 µs

10

-- 80

0.4

-- 2.5 V/µs

1

--

5 V/µs

Operating Parameters

Operating voltage 5)

Tj =-40...+150°C: Vbb(on)

4.5

-- 42 V

Undervoltage shutdown

Tj =-40...+150°C: Vbb(under)

2.4

-- 4.5 V

Undervoltage restart

Tj =-40...+150°C: Vbb(u rst)

--

-- 4.5 V

Undervoltage restart of charge pump

Vbb(ucp)

see diagram page 12

Tj =-40...+150°C:

-- 6.5 7.5 V

Undervoltage hysteresis

∆Vbb(under) = Vbb(u rst) - Vbb(under)

∆Vbb(under)

-- 0.2

-- V

Overvoltage shutdown

Tj =-40...+150°C: Vbb(over)

42

-- 52 V

Overvoltage restart

Tj =-40...+150°C: Vbb(o rst)

42

--

-- V

Overvoltage hysteresis

Tj =-40...+150°C: ∆Vbb(over)

-- 0.2

-- V

Overvoltage protection6)

Tj =-40°C: Vbb(AZ)

60

--

-- V

Ibb=40 mA

Tj =25...+150°C:

63 67

Standby current (pin 3)

Tj=-40...+25°C: Ibb(off)

-- 12 25 µA

VIN=0, IST=0,

Tj=150°C:

-- 18 60

Leakage output current (included in Ibb(off))

IL(off)

--

6

-- µA

VIN=0

Operating current (Pin 1)7), VIN=5 V

IGND

-- 1.1

-- mA

5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V

6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.

Infineon Technologies AG

Page 3

1999-Mar.-22

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