VS-11DQ03TR Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-11DQ03TR Datasheet PDF : 6 Pages
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VS-11DQ03, VS-11DQ03-M3, VS-11DQ04, VS-11DQ04-M3
www.vishay.com
Vishay Semiconductors
10
T = 150 °C
1
T = 125 °C
T = 25 °C
0.1
0
0.3
0.6
0.9
1.2
1.5
93205_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
TJ = 150° C
1
TJ = 125° C
0.1
0.01
0.001
TJ = 25° C
0.0001
0
10
20
30
40
93205_02
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
TJ = 25°C
150
120
DC
90
60
Square wave (D = 0.50)
80 % Rated VR applied
30
see note (1)
0
0
0.3
0.6
0.9
1.2
1.5
93205_04
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
0.8
D = 0.20
D = 0.25
D = 0.33
0.6
D = 0.50
D = 0.75
RMS Limit
0.4
DC
0.2
0
0
0.3
0.6
0.9
1.2
1.5
93205_05
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With rated VRRM Applied
Following Surge
100
10
0
10
20
30
40
50
93205_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
TJ = 25 °C
10
10
100
1000
10 000
93205_06
tp - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 21-Sep-11
3
Document Number: 93205
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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