UT6164CJC Просмотр технического описания (PDF) - Utron Technology Inc
Номер в каталоге
Компоненты Описание
производитель
UT6164CJC Datasheet PDF : 10 Pages
| |||
UTRON
Rev. 1.0
UT6164C
8K X 8 BIT HIGH SPEED CMOS SRAM
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER
SYMBOL MIN.
MAX.
Input Capacitance
CIN
-
8
Input/Output Capacitance
CI/O
-
10
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
UNIT
pF
pF
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0V to 3.0V
3ns
1.5V
CL=30pF, IOH/IOL=-4mA/8mA
AC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10% , TA = 0℃ to 70℃)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
SYMBOL
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
UT6164C-10
MIN. MAX.
10
-
-
10
-
10
-
5
2
-
0
-
-
5
-
5
3
-
UT6164C-12
MIN. MAX.
12
-
-
12
-
12
-
6
3
-
0
-
-
6
-
6
3
-
UT6164C-15 UNIT
MIN. MAX.
15
-
ns
-
15 ns
-
15 ns
-
7 ns
4
- ns
0
- ns
-
7 ns
-
7 ns
3
- ns
(2) WRITE CYCLE
PARAMETER
SYMBOL UT6164C-10 UT6164C-12
MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
10
-
12
-
Address Valid to End of Write
tAW
8
-
10
-
Chip Enable to End of Write
tCW
8
-
10
-
Address Set-up Time
tAS
0
-
0
-
Write Pulse Width
tWP
8
-
9
-
Write Recovery Time
tWR
0
-
0
-
Data to Write Time Overlap
tDW
6
-
7
-
Data Hold from End of Write Time
tDH
0
-
0
-
Output Active from End of Write
tOW*
2
-
3
-
Write to Output in High Z
tWHZ*
-
6
-
7
*These parameters are guaranteed by device characterization, but not production tested.
UT6164C-15
MIN. MAX.
15
-
12
-
12
-
0
-
10
-
0
-
8
-
0
-
4
-
-
8
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
P80074
Share Link: 