UT6164C Просмотр технического описания (PDF) - Utron Technology Inc
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UT6164C Datasheet PDF : 10 Pages
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UTRON
Rev. 1.0
ABSOLUTE MAXIMUM RATINGS*
UT6164C
8K X 8 BIT HIGH SPEED CMOS SRAM
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to Vss
VTERM
-0.5 to +6.5
V
Operating Temperature
TA
0 to +70
℃
Storage Temperature
TSTG
-65 to +150
℃
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
℃
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect device reliability.
TRUTH TABLE
MODE
CE1 CE2 OE WE
Standby
HX X
X
Standby
XL X
X
Output Disable
LHH
H
Read
LH L
H
Write
LHX
L
Note: H = VIH, L=VIL, X = Don't care.
I/O OPERATION
High - Z
High - Z
High - Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC
ICC
ICC
DC ELECTRICAL CHARACTERISTICS (VCC = 5V± 10%, TA = 0℃ to 70℃)
PARAMETER
SYMBOL TEST CONDITION
Input High Voltage
VIH
Input Low Voltage
VIL
Input Leakage Current
ILI
VSS ≦VIN ≦VCC
Output Leakage Current ILO
VSS ≦VI/O ≦VCC
CE1=VIH or CE2=VIL or
OE =VIH or WE =VIL
Output High Voltage
VOH
IOH = - 4mA
Output Low Voltage
VOL
IOL = 8mA
Operating Power
Supply Current
Cycle time=Min.
- 10
ICC
CE1 = VIL , CE2= VIH
- 12
II/O = 0mA
- 15
Standby Current (TTL) ISB
CE1= VIH or CE2= VIL
Standby Current (CMOS) ISB1
CE1≧VCC-0.2V or CE2≦0.2V
MIN.
2.2
- 0.5
-1
-1
2.4
-
-
-
-
-
-
MAX.
VCC+0.5
0.8
1
1
UNIT
V
V
µA
µA
-
V
0.4
V
180
mA
160
mA
140
mA
30
mA
5
mA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
2
P80074
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