BB304M Просмотр технического описания (PDF) - Renesas Electronics
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BB304M Datasheet PDF : 10 Pages
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BB304M
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Forward transfer admittance
Power gain
Noise figure
Symbol
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
Min
12
+10
±10
—
—
0.4
VG2S(off)
0.5
Ciss
Coss
Crss
ID(op) 1
2.3
0.9
0.003
9
ID(op) 2
—
|yfs|1
22
|yfs|2
—
PG1
24
PG2
—
NF1
—
NF2
—
Typ
—
—
—
—
—
—
—
2.8
1.3
0.02
15
13
27
27
29
29
1.2
1.2
Max
—
—
—
+100
±100
1.0
1.0
3.6
2.0
0.05
19
—
34
—
32
—
1.9
—
Unit
V
V
V
nA
nA
V
V
pF
pF
pF
mA
mA
mS
mS
dB
dB
dB
dB
(Ta = 25°C)
Test conditions
ID = 200 µA, VG1S = VG2S = 0
IG1 = +10 µA, VG2S = VDS = 0
IG2 = ±10 µA, VG1S = VDS = 0
VG1S = +9 V, VG2S = VDS = 0
VG2S = ±9 V, VG1S = VDS = 0
VDS = 5 V, VG2S = 4 V
ID = 100 µA
VDS = 5 V, VG1S = 5 V
ID = 100 µA
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ, f = 1 MHz
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 470 kΩ
VDS = 5 V, VG1 = 5 V, VG2S =4 V
RG = 180 kΩ, f = 1 kHz
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 470 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ, f = 200 MHz
VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 470 kΩ, f = 200 MHz
VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 180 kΩ, f = 200 MHz
VDS = 9 V, VG1 = 9 V, VG2S =6 V
RG = 470 kΩ, f = 200 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9
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