NDF02N60Z, NDP02N60Z, NDD02N60Z
THERMAL RESISTANCE
Junction−to−Case (Drain)
Parameter
NDP02N60Z
NDF02N60Z
NDD02N60Z
Symbol
RqJC
Junction−to−Ambient Steady State
(Note 3) NDP02N60Z
(Note 3) NDF02N60Z
(Note 4) NDD02N60Z
(Note 3) NDD02N60Z−1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
600
Breakdown Voltage Temperature
Coefficient
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Drain−to−Source Leakage Current
VDS = 600 V, VGS = 0 V
25°C
150°C
IDSS
Gate−to−Source Forward Leakage
VGS = ±20 V
IGSS
ON CHARACTERISTICS (Note 5)
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 1.0 A
RDS(on)
Gate Threshold Voltage
Forward Transconductance
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.2 A
VGS(th)
3.0
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 300 V, ID = 2.4 A,
VGS = 10 V
VDD = 300 V, ID = 2.4 A, VOS = 10 V
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGP
Rg
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 2.4 A,
VGS = 10 V, RG = 5 W
Fall Time
td(on)
tr
td(off)
tf
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 2.4 A, VGS = 0 V
VSD
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0 V, VDD = 30 V
trr
IS = 2.4 A, di/dt = 100 A/ms
Qrr
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
Value
1.7
5.2
2.2
51
51
41
80
Typ
0.6
4.0
1.7
274
34
7.0
10.1
2.4
5.3
6.4
4.9
9.0
7.0
15
7.0
240
0.7
Max
1
50
±10
4.8
4.5
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
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