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LY625128 Просмотр технического описания (PDF) - Lyontek Inc.

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Компоненты Описание
производитель
LY625128
LYONTEK
Lyontek Inc. LYONTEK
LY625128 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
®
Rev. 2.2
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
Address
Dout
tRC
tAA
Previous Data Valid
LY625128
512K X 8 BIT LOW POWER CMOS SRAM
tOH
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
Address
CE#
OE#
Dout
tRC
tAA
tACE
High-Z
tOE
tOLZ
tCLZ
tOH
tOHZ
tCHZ
Data Valid
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low,; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7

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