PMST5089 Просмотр технического описания (PDF) - Philips Electronics
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производитель
PMST5089 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
PMST5088; PMST5089
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBE
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
PMST5088
DC current gain
PMST5089
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
PMST5088
PMST5089
IE = 0; VCB = 20 V
−
IE = 0; VCB = 20 V; Tj = 150 °C
−
IC = 0; VEB = 3 V
−
IC = 0; VEB = 4.5 V
−
VCE = 5 V
IC = 0.1 mA
300
IC = 1 mA
350
IC = 10 mA
300
VCE = 5 V
IC = 0.1 mA
400
IC = 1 mA
450
IC = 10 mA
400
IC = 10 mA; IB = 1 mA
−
IC = 10 mA; VCE = 5 V
−
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
IC = 100 µA; VCE = 5 V; RS = 1 kΩ
f = 10 Hz to 15.7 kHz
−
−
MAX.
50
10
50
100
UNIT
nA
µA
nA
nA
900
−
−
1200
−
−
500
800
4
12
−
mV
mV
pF
pF
MHz
3
dB
2
dB
1999 Apr 22
3
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