BTS555 Просмотр технического описания (PDF) - Infineon Technologies
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BTS555 Datasheet PDF : 16 Pages
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Data Sheet BTS555
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
Z23)
H
L
H
H
Current
Sense
IIS
0
nominal
IIS, lim
0
0
0
0
0
0
<nominal 22)
0
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occure
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
I bb
VbIN
3
Vbb
IL
Vbb
IN
OUT
2
PROFET
1,5
RIN
IS
V
IN
VbIS
4 I IS
I IN
DS
VIS
R IS
RON measurement layout (straight leads)
VON
≤ 5.5 mm
VOUT
Vbb force contacts
Out Force Sense
contacts contacts
(both out
pins parallel)
Two or more devices can easily be connected in
parallel to increase load current capability.
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Infineon Technologies AG
7
2010-June-01
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