KRX104E Просмотр технического описания (PDF) - KEC
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KRX104E Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KRX104E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌIncluding two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
ᴌWith Built-in bias resistors.
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1
OUT
R1
IN
R2
COMMON
Q2
R1
IN
OUT
Q1
R1=47KΩ
R2=47KΩ
R2
COMMON
Q2
R1=4.7KΩ
R2=10KΩ
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q 1 COMMON (EMITTER)
2. Q 1 IN (BASE)
3. Q 2 COMMON (EMITTER)
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)
Q 2 IN (BASE)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
Marking
5
Type Name
4
BN
Q1 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1, Q2 MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
1
2
3
SYMBOL
VO
VI
IO
SYMBOL
VO
VI
IO
SYMBOL
PD *
Tj
Tstg
1
2
3
RATING
50
40, -10
100
UNIT
V
V
Ὠ
RATING
-50
-20, 7
-100
RATING
200
150
-55ᴕ150
UNIT
V
V
Ὠ
UNIT
Ὥ
ᴱ
ᴱ
2002. 1. 24
Revision No : 1
1/3
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