IRF630N Просмотр технического описания (PDF) - New Jersey Semiconductor
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IRF630N Datasheet PDF : 2 Pages
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N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS (TC=25°C)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=O; lD=0.25mA
VGS(th) Gate Threshold Voltage
VDs= VGS; ID= 0.25mA
RoS(ON) Drain-Source On-stage Resistance VGs=10V; ID=5.4A
loss
Gate Source Leakage Current
VGs=±20V;VDS=0
loss
Zero Gate Voltage Drain Current
VDS=200V; VGS=0
VSD
Diode Forward Voltage
IF= 5.4A; VGS=0
IRF630N
MIN MAX UNIT
200
V
2
4
V
0.3
Q
±100
nA
25
uA
1.3
V
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