SSM2211_04 Просмотр технического описания (PDF) - Analog Devices
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SSM2211_04 Datasheet PDF : 20 Pages
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ELECTRICAL CHARACTERISTICS
SSM2211
Table 1. VS = 5.0 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.
Parameter
Symbol
Conditions
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
VOOS
AVD = 2
Output Impedance
ZOUT
SHUTDOWN CONTROL
Input Voltage High
VIH
ISY = < 100 mA
Input Voltage Low
VIL
ISY = normal
POWER SUPPLY
Power-Supply Rejection Ratio
PSRR
VS = 4.75 V to 5.25 V
Supply Current
ISY
VO1 = VO2 = 2.5 V
Supply Current, Shutdown Mode
ISD
Pin 1 = VDD; see Figure 32
DYNAMIC PERFORMANCE
Gain Bandwidth
GBP
Phase Margin
Ø0
AUDIO PERFORMANCE
Total Harmonic Distortion
THD + N P = 0.5 W into 8 Ω, f = 1 kHz
Total Harmonic Distortion
THD + N P = 1.0 W into 8 Ω, f = 1 kHz
Voltage Noise Density
en
f = 1 kHz
Min Typ Max Unit
4
50
mV
0.1
Ω
3.0
V
1.3
V
66
dB
9.5
mA
100
nA
4
MHz
86
Degrees
0.15
%
0.2
%
85
nV√Hz
Table 2. VS = 3.3 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VD/2, unless otherwise noted.
Parameter
Symbol
Conditions
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
VOOS
ZOUT
AVD = 2
SHUTDOWN INPUT
Input Voltage High
Input Voltage Low
VIH
ISY = < 100 µA
VIL
POWER SUPPLY
Supply Current
Supply Current, Shutdown Mode
ISY
VO1 = VO2 = 1.65 V
ISD
Pin 1 = VDD; see Figure 32
AUDIO PERFORMANCE
Total Harmonic Distortion
THD + N P = 0.35 W into 8 Ω, f = 1 kHz
Min Typ Max Unit
5
50
mV
0.1
Ω
1.7
V
1
V
5.2
mA
100
nA
0.1
%
Table 3. VS = 2.7 V, TA = 25°C, RL = 8 Ω, CB = 0.1 µF, VCM = VS/2, unless otherwise noted.
Parameter
Symbol
Conditions
GENERAL CHARACTERISTICS
Differential Output Offset Voltage
Output Impedance
VOOS
ZOUT
AVD = 2
SHUTDOWN CONTROL
Input Voltage High
Input Voltage Low
VIH
ISY = < 100 mA
VIL
ISY = normal
POWER SUPPLY
Supply Current
ISY
VO1 = VO2 = 1.35 V
Supply Current, Shutdown Mode
ISD
Pin 1 = VDD; see Figure 32
AUDIO PERFORMANCE
Total Harmonic Distortion
THD + N P = 0.25 W into 8 Ω, f = 1 kHz
Rev. C | Page 3 of 20
Min Typ Max Unit
5
50
mV
0.1
Ω
1.5
V
0.8
V
4.2
mA
100
nA
0.1
%
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