1N5062 Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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1N5062 Datasheet PDF : 2 Pages
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1N5059-1N5062
Plastic Silicon Rectifier
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR2.0 µ s/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
20
10
TJ=25
Pulse Width=300µS
1.0
0.1
0.01
0.4
0.6 0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
2.0
1.6
1.2
0.8
Single Phase
Half Wave 50HZ
Resistive or
Inductive Load
0.4
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
50
40
TJ=25℃
10ms Single Half
Sine-Wave
30
20
10
0
1
5
10
50 100
NUMBER OF CYCLES AT 50Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
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