LL4150 Просмотр технического описания (PDF) - Vishay Siliconix
Номер в каталоге
Компоненты Описание
производитель
LL4150 Datasheet PDF : 3 Pages
| |||
Silicon Epitaxial Planar Diodes
Features
D Low forward voltage drop
D High forward current capability
LL4150
Vishay Telefunken
Applications
High speed switch and general purpose use in com-
puter and industrial applications
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward current
tp=1ms
Average forward current
Power dissipation
VR=0
Junction temperature
Storage temperature range
94 9371
Type
Symbol Value
Unit
VRRM
50
V
VR
50
V
IFSM
4
A
IF
600
mA
IFAV
300
mA
PV
500
mW
Tj
200
°C
Tstg –65...+200 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
on PC board 50mmx50mmx1.6mm
Symbol
Value
Unit
RthJA
500
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
Reverse current
VR=50V
VR=50V, Tj=150°C
Diode capacitance
VR=0, f=1MHz, VHF=50mV
W Reverse recovery time IF=IR=10...100mA, iR=0.1xIR,
RL=100
Type Symbol Min Typ Max Unit
VF 0.54
VF 0.66
VF 0.76
VF 0.82
VF 0.87
IR
IR
CD
trr
0.62 V
0.74 V
0.86 V
0.92 V
1.0 V
100 nA
100 mA
2.5 pF
4 ns
Document Number 85558
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
1 (3)
Share Link: 