NDD04N60Z-1G_09 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

NDD04N60Z-1G_09

N-Channel Power MOSFET 1.8 Ω, 600 Volts

ON Semiconductor 

NDF04N60Z, NDP04N60Z, NDD04N60Z

PACKAGE DIMENSIONS

−B−

F

Q

A

123

H

K

−Y−

TO−220 FULLPAK

CASE 221D−03

ISSUE J

−T−

SEATING

PLANE

C

S

U

G

J

N

R

L

D 3 PL

0.25 (0.010) M B M Y

B

F

Q

H

Z

4

A

1 23

K

L

V

G

D

N

TO−220AB

CASE 221A−09

ISSUE AE

−T−

SEATING

PLANE

C

TS

U

R

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

INCHES

DIM MIN MAX

A 0.617 0.635

B 0.392 0.419

C 0.177 0.193

D 0.024 0.039

F 0.116 0.129

G 0.100 BSC

H 0.118 0.135

J 0.018 0.025

K 0.503 0.541

L 0.048 0.058

N 0.200 BSC

Q 0.122 0.138

R 0.099 0.117

S 0.092 0.113

U 0.239 0.271

STYLE 1:

PIN 1.

2.

3.

GATE

DRAIN

SOURCE

MILLIMETERS

MIN MAX

15.67 16.12

9.96 10.63

4.50 4.90

0.60 1.00

2.95 3.28

2.54 BSC

3.00 3.43

0.45 0.63

12.78 13.73

1.23 1.47

5.08 BSC

3.10 3.50

2.51 2.96

2.34 2.87

6.06 6.88

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

A 0.570 0.620

B 0.380 0.405

C 0.160 0.190

D 0.025 0.035

F 0.142 0.161

G 0.095 0.105

H 0.110 0.155

J 0.014 0.025

K 0.500 0.562

L 0.045 0.060

N 0.190 0.210

Q 0.100 0.120

R 0.080 0.110

S 0.045 0.055

T 0.235 0.255

U 0.000 0.050

V 0.045 ---

Z --- 0.080

MILLIMETERS

MIN MAX

14.48 15.75

9.66 10.28

4.07 4.82

0.64 0.88

3.61 4.09

2.42 2.66

2.80 3.93

0.36 0.64

12.70 14.27

1.15 1.52

4.83 5.33

2.54 3.04

2.04 2.79

1.15 1.39

5.97 6.47

0.00 1.27

1.15 ---

--- 2.04

STYLE 5:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

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