NDD04N60ZT4G(2013) Просмотр технического описания (PDF) - ON Semiconductor
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NDD04N60ZT4G Datasheet PDF : 9 Pages
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NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current RqJC (Note 1)
ID
4.8 4.1 A
Continuous Drain Current RqJC, TA =
100°C (Note 1)
ID
3.0 2.6 A
Pulsed Drain Current,
IDM
VGS @ 10V
Power Dissipation RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche Energy, ID = 4.0 EAS
A
20
20
A
30
83 W
±30
V
120
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage
VISO 4500
−
V
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 15)
Peak Diode Recovery (Note 2)
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current
(Body Diode)
IS
4.0
A
Maximum Temperature for Soldering
TL
Leads
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg − 55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS (@ TJmax)
650 V
RDS(on) (MAX) @ 2 A
2.0 Ω
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF04N60ZG
TO−220FP
CASE 221D
1
2
3
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD04N60Z−1G
IPAK
CASE 369D
12
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
June, 2013 − Rev. 8
Publication Order Number:
NDF04N60Z/D
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