SISA18ADN Просмотр технического описания (PDF) - Vishay Semiconductors
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SISA18ADN Datasheet PDF : 13 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
55
VGS = 10 V thru 4V
56
44
VGS = 3 V
42
33
28
22
SiSA18ADN
Vishay Siliconix
TC = 25 °C
14
0
0.0
0.020
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.016
0.012
VGS = 4.5 V
0.008
11
0
0
TC = 125 °C
TC = - 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
960
720
480
Ciss
Coss
0.004
VGS = 10 V
0.000
0
14
28
42
56
70
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
240
0
0
Crss
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
1.7
ID = 10 A
1.5
1.3
1.1
VGS = 10 V
VGS = 4.5 V
2
0.9
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63259
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0112-Rev. A, 21-Jan-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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