MPSA93(2012) Просмотр технического описания (PDF) - Unisonic Technologies
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MPSA93 Datasheet PDF : 4 Pages
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MPSA92/93
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
MPSA92
-300
V
Collector-Base Voltage
MPSA93
VCBO
-200
V
MPSA92
-300
V
Collector-Emitter Voltage
MPSA93
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
SOT-89
1
W
Collector Dissipation
TO-92
PC
1.5
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Base Breakdown
Voltage
MPSA92
MPSA93
BVCBO IC=-100µA, IE=0
Collector-Emitter Breakdown
Voltage
MPSA92
MPSA93
BVCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
MPSA92
MPSA93
BVEBO
ICBO
IE=-100µA, IC=0
VCB=-200V, IE=0
Emitter Cut-Off Current
ON CHARACTERISTICS
IEBO
VEB=-3V, IC=0
DC Current Gain(note)
VCE=-10V, IC=-1mA
hFE
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(SAT) IC=-20mA, IB=-2mA
VBE(SAT) IC=-20mA, IB=-2mA
Current Gain Bandwidth Product
Output Capacitance
MPSA92
MPSA93
fT
VCE=-20V, IC=-10mA, f=100MHz
Cob
VCB=-20V, IE=0, f=1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV
MIN
-300
-200
-300
-200
-5
60
80
80
50
TYP MAX UNIT
V
V
V
V
V
-0.25 µA
-0.25 µA
-0.10 µA
-0.5 V
-0.90 V
MHz
6 pF
8 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-019.C
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