MPSA29RLRPG Просмотр технического описания (PDF) - ON Semiconductor
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MPSA29RLRPG Datasheet PDF : 4 Pages
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MPSA28, MPSA29
VCE = 5.0 V
200
TA = 125°C
100
50
TA = 25°C
20
TA = −55°C
10
5.0
2.0
1.0
1.0 2.0
5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
500 1 k
1.8
1.6
TA = 25°C
1.4
1.2
VBE(S) @ IC/IB = 1.0 k
VBE(ON) @ VCE = 5.0 V
1.0
0.8
0.6
1.0 2.0
VCE(S) @ IC/IB = 1.0 k
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 2. “ON” Voltages
500 1 k
0
−1.0
qVC for VCE(S)
−2.0
25°C to 125°C
−55°C to 25°C
−3.0
−4.0
qVB for VBE
25°C to 125°C
−55°C to 25°C
−5.0
1.0 2.0
5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 3. Temperature Coefficients
2.4
TA = 25°C
2.0
1.6
1.2 IC = 10 mA
0.8
IC = 500 mA
IC = 250 mA
IC = 100 mA
0.4
0.2
1.0 2.0
10 20
100 200
IB, BASE CURRENT (mA)
1 k 1.5 k
Figure 4. Collector Saturation Region
1k
10
500
200
TA = 25°C
100
1.0 ms
1.0 s
TC = 25°C
100 ms
5.0
VCE = 5.0 V
TA = 25°C
2.0
f = 100 MHz
1.0
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
MPSA28
VALID FOR DUTY CYCLE v 10%
MPSA29
10
1.0 2.0
5.0
10
20
50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region − Safe Operating Area
0.5
0.2
0.1
0.3 0.5
1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA)
100 200 300
Figure 6. High Frequency Current Gain
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