MPSA28(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor
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MPSA28 Datasheet PDF : 4 Pages
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Typical Characteristics (continued)
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β = 1000
1.6
- 40 ºC
1.2
25 °C
125 ºC
0.8
0.4
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
Base Emitter ON Voltage vs
Collector Current
2
1.6
- 40 °C
25 °C
1.2
125 °C
0.8
0.4
VCE = 5V
0
1
10
100
I C - COLLECTOR CURRENT (mA)
P 03
1000
Collector-Cutoff Current
vs. Ambient Temperature
100
VCB = 80V
10
1
0.1
0.01
25
50
75
100
125
TA- AMBIENT TEMPERATURE (ºC)
P 03
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
114.2
114
113.8
113.6
113.4
113.2
113
112.8
0.1
1
10
100
1000
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
f = 1.0 MHz
20
15
10
C ib
5
Cob
2
0.1
1
10
100
Vce- COLLECTOR VOLTAGE(V)
Gain Bandwidth Product
vs Collector Current
40
Vce = 5V
30
20
10
0
1
10
20
50
100 150200
IC- COLLECTOR CURRENT (mA)
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