MPSA28(1997) Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

производитель

MPSA28
(Rev.:1997)

NPN Darlington Transistor

Fairchild Semiconductor 

NPN Darlington Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CES

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 100 µA, VBE = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 60 V, IE = 0

VCE = 60 V, VBE = 0

VEB = 10 V, IC = 0

80

80

12

100

500

100

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

IC = 10 mA, VCE = 5.0 V

IC = 100 mA, VCE = 5.0 V

IC = 10 mA, IB = 0.01 mA

IC = 100 mA, IB = 0.1 mA

IC = 100 mA, VCE = 5.0 V

10,000

10,000

1.2

1.5

2.0

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 5.0,

125

f = 100 MHz

Output Capacitance

VCB = 1.0 V, IE = 0, f = 1.0 MHz

8.0

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

V

V

V

nA

nA

nA

V

V

MHz

pF

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

VCE = 5V

80

125 °C

60

40

20 - 40 °C

25 °C

0

0.001

0.01

0.1 0.2

I C - COLLECTOR CURRENT (A)

P 03

Collector-Emitter Saturation

Voltage vs Collector Current

1.6

β = 1000

1.2

- 40 ºC

0.8

25 ºC

0.4

125 ºC

0

1

10

100

1000

I C - COLLECTOR CURRENT (mA)

P 03

Share Link: