MPSA29 Просмотр технического описания (PDF) - Continental Device India Limited
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MPSA29 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
MPSA28 / MPSA29
TO-92
Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCES
VCBO
VEBO
IC
PD
PD
Tj, Tstg
MPSA28
80
80
12
500
625
5.0
1.5
12
- 55 to +150
MPSA29
100
100
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
200
83.3
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCES
IC=100µA, VBE=0
MPSA28
MPSA29
Collector Base Voltage
VCBO
IC=100µA, IE=0
MPSA28
MPSA29
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Collector Cut Off Current
ICBO VCB=60V, IE=0,
VCB=80V, IE=0,
MPSA28
MPSA29
Collector Cut Off Current
ICES
VCE=60V, VBE=0, MPSA28
VCE=80V, VBE=0, MPSA29
Emitter Cut Off Current
IEBO
VEB=10V, IC = 0
DC Current Gain
*hFE
VCE=5V, IC=10mA
VCE=5V, IC=100mA
Collector Emitter Saturation Voltage *VCE (sat)
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
Base Emitter On Voltage
*VBE (on)
VCE=5V, IC=100mA
Current Gain Bandwidth Product
**fT IC=10mA, VCE=5V, f=100MHz
Output Capacitance
Cob
VCB=10V, IE=0V, f=1.0 MHz
MIN
80
100
80
100
12
10,000
10,000
125
MAX
100
100
500
500
100
1.2
1.5
2.0
8.0
*Pulse test: Pulse Width <300µs, Duty Cycle<2%
**fT = IhfeI* ftest
MPSA28_29Rev270607E
Continental Device India Limited
Data Sheet
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
V
V
nA
nA
nA
nA
nA
V
V
V
MHz
pF
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