KRX105U Просмотр технического описания (PDF) - KEC
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KRX105U Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
KRX105U
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·Including two devices in USV.
(Ultra Super mini type with 5 leads.)
·With Built-in bias resistors.
·Simplify circuit design.
·Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1
C
Q2
R1
B
R1
B
E
C
R1=4.7KΩ
(Q1, Q 2 COMMON)
E
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_0.1
T
T 0.15+0.1/-0.05
G
1. Q 1 COMMON (EMITTER)
2. Q 1 IN (BASE)
3. Q 2 COMMON (EMITTER)
4. Q 2 OUT (COLLECTOR)
5. Q 1 OUT (COLLECTOR)
Q 2 IN (BASE)
USV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q2
Q1
Marking
5
Type Name
4
BE
Q1 MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q2 MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2002. 5. 8
Revision No : 2
1
2
3
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
PC *
Tj
Tstg
1
2
3
RATING
50
50
5
100
UNIT
V
V
V
㎃
RATING
-50
-50
-5
-100
UNIT
V
V
V
㎃
RATING
200
150
-55～150
UNIT
㎽
℃
℃
1/3
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