BD241 Просмотр технического описания (PDF) - Bourns, Inc
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BD241 Datasheet PDF : 5 Pages
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BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD241
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
BD241A
60
BD241B
80
BD241C
100
VCE = 55 V
VBE = 0
BD241
0.2
Collector-emitter
ICES cut-off current
VCE = 70 V
VCE = 90 V
VBE = 0
VBE = 0
BD241A
BD241B
0.2
0.2
VCE = 115 V
VBE = 0
BD241C
0.2
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
BD241/241A
BD241B/241C
0.3
0.3
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
1
Forward current
hFE
transfer ratio
VCE = 4 V
VCE = 4 V
IC = 1 A
IC = 3 A
25
(see Notes 5 and 6)
10
Collector-emitter
VCE(sat) saturation voltage
IB = 0.6 A
IC = 3 A
(see Notes 5 and 6)
1.2
Base-emitter
VBE
voltage
VCE = 4 V
IC = 3 A
(see Notes 5 and 6)
1.8
Small signal forward
hfe
current transfer ratio VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
|hfe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3
µs
1
µs
PRODUCT INFORMATION
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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