PDTC143ZT_99 Просмотр технического описания (PDF) - Philips Electronics
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PDTC143ZT_99 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN resistor-equipped transistor
Product specification
PDTC143ZT
103
handbook, halfpage
hFE
102
10
MGM924
(1)
(2)
(3)
103
handbook, halfpage
VCEsat
(mV)
102
(1)
(2)
(3)
MGM923
1
10−1
1
10
102
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
10
10−1
1
10
102
IC (mA)
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
Vi(off)
(V)
1
(1)
(2)
(3)
MGM926
10−110−2
10−1
1
10
IC (mA)
VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
102
handbook, halfpage
Vi(on)
(V)
10
MGM925
1
(1)
(2)
(3)
10−1
10−1
1
10
102
IC (mA)
VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 21
4
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