DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CR3PM-12_05 Просмотр технического описания (PDF) - Renesas Electronics

Номер в каталоге
Компоненты Описание
производитель
CR3PM-12_05
Renesas
Renesas Electronics Renesas
CR3PM-12_05 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
CR3PM-12
Performance Curves
Maximum On-State Characteristics
102
7 Tc = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Gate Characteristics
102
7
5
3
2
VFGM = 6V
101
7
5
PGM = 0.5W
3
2
PG(AV) = 0.1W
VGT = 0.8V
100
7
5
IGT = 100µA
3
(Tj = 25°C)
2
IFGM = 0.3A
10–1
7
5
VGD = 0.1V
5 710–12 3 5 7100 2 3 5 7101 2 3 5 7102 2 3
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
1.0
0.9
Distribution
0.8
0.7
Typical Example
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20 0 20 40 60 80 100 120
Junction Temperature (°C)
Rev.2.00, Mar.01.2005, page 3 of 7
Rated Surge On-State Current
100
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
5
3
2
#2
102 # 1
7
5
3
2
Typical Example
IGT (25°C)
# 1 45µA
# 2 18µA
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]