CR3PM-12-A8 Просмотр технического описания (PDF) - Renesas Electronics
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CR3PM-12-A8 Datasheet PDF : 8 Pages
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CR3PM-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
4.7
3.0
Surge on-state current
I2t for fusing
ITSM
70
I2t
24.5
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Viso
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
2.0
1500
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 103°C
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
V
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA Tj = 125°C, VRRM applied,
RGK = 220 Ω
Repetitive peak off-state current
IDRM
—
—
2.0
mA Tj = 125°C, VDRM applied,
RGK = 220 Ω
On-state voltage
VTM
—
—
1.6
V
Tc = 25°C, ITM = 10 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
Gate trigger current
Thermal resistance
VGD
0.1
IGT
1
Rth (j-c)
—
—
—
V
Tj = 125°C, VD = 1/2 VDRM
RGK = 220 Ω
—
100Note3
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
—
4.1
°C/W Junction to caseNote2
Notes: 2. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50 40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00, Mar.01.2005, page 2 of 7
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