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EFM8UB20F32G Просмотр технического описания (PDF) - Silicon Laboratories

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EFM8UB20F32G Datasheet PDF : 50 Pages
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EFM8UB2 Data Sheet
Electrical Specifications
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
ADC0 Supply Current
IADC
Operating at 500 ksps
VDD = 3.0 V
750
1000
μA
On-chip Precision Reference
IVREFP
75
µA
Temperature Sensor
ITSENSE
35
μA
Comparator 0 (CMP0, CMP1)
ICMP
CPMD = 11
CPMD = 10
1
μA
4
μA
CPMD = 01
10
μA
CPMD = 00
20
μA
Voltage Supply Monitor (VMON0) IVMON
15
50
μA
Regulator Bias Currents
IVREG
Both Regulators in Normal Mode
200
μA
Both Regulators in Low Power
Mode
100
μA
5 V Regulator Off, Internal LDO in
150
μA
Low Power Mode
USB (USB0) Full-Speed
IUSB
Active
8
mA
Note:
1. Currents are additive. For example, where IDD is specified and the mode is not mutually exclusive, enabling the functions increa-
ses supply current by the specified amount.
2. Includes supply current from regulators, supply monitor, and High Frequency Oscillator.
3. Includes supply current from regulators, supply monitor, and Low Frequency Oscillator.
Table 4.3. Reset and Supply Monitor
Parameter
Symbol Test Condition
Min
VDD Supply Monitor Threshold
VVDDM
2.60
VDD Ramp Time
tRMP
Time to VDD > 2.7 V
Reset Delay from non-POR source tRST
Time between release of reset
source and code execution
RST Low Time to Generate Reset tRSTL
15
Missing Clock Detector Response tMCD
FSYSCLK >1 MHz
80
Time (final rising edge to reset)
VDD Supply Monitor Turn-On Time tMON
Table 4.4. Flash Memory
Parameter
Symbol Test Condition
Min
Write Time1
tWRITE
One Byte
10
Erase Time1
tERASE
One Page
10
VDD Voltage During Programming2 VPROG
2.7
Endurance (Write/Erase Cycles) NWE
10k
Typ
2.65
580
Typ
15
15
100k
Max
Unit
2.70
V
1
ms
250
μs
μs
800
μs
100
μs
Max
Units
20
μs
22.5
ms
3.6
V
Cycles
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