P4KE100 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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производитель
P4KE100 Datasheet PDF : 7 Pages
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Typical Characteristics
100
10
FIG1:Peak Pulse Power Rating Curve
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
1.0
0.1
0.1
1
10
100
1000 10000
td(μs)
150
100
FIG3: Pulse Waveform
tr=10μs
Peak Value
IPPM
TJ=25 ℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
Half Value - IPP
2
IPPM
50
10/1000μs Waveform as
Defined by R.E.A.
0
0
100
80
60
40
td
1.0
2.0
3.0
4.0
t（ms）
FIG5: Maximum Non-Repetitive Surge Current
TJ=TJMax.
8.3ms Single Half Sine-Wave
20
10
0
10
100
Number of Cycles
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
75
50
25
0
0
25 50
75 100 125 150 175 200
TJ（℃）
FIG4: Power Derating Curve
100
60Hz
Resistive or
Inductive Load
75
50
L=0.375''(9.5mm)
25
Lead Lengths
0
0
25 50
75 100 125 150 175 200
TL（℃）
FIG6:Typical Transient Thermal Impedance
100
10
1
0.001 0.01
0.1
1
10
100 1000
tp(s)
High Diode Semiconductor
5
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