DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

DS1620 Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated

Номер в каталоге
Компоненты Описание
производитель
DS1620
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS1620 Datasheet PDF : 13 Pages
First Prev 11 12 13
DS1620
DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; VDD=2.7V to 5.5V)
PARAMETER
SYMBOL CONDITION MIN MAX UNITS NOTES
Thermometer Error
TERR
0°C to +70°C
-55°C to +0°C
±½
°C
10, 11
and 70°C to
See Typical Curve
125°C
Logic 0 Output
VOL
0.4
V
3
Logic 1 Output
VOH
2.4
V
2
Input Resistance
RI
RST to GND
1
M
DQ, CLK to VDD
1
M
Active Supply Current
ICC
0°C to +70°C
1
mA
4, 5
Standby Supply Current
ISTBY
0°C to +70°C
1
µA
4, 5
SINGLE CONVERT TIMING DIAGRAM (STAND-ALONE MODE)
CONV
tCNV
AC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; VDD=2.7V to 5.5V)
PARAMETERS
SYMBOL MIN TYP MAX UNITS NOTES
Temperature Conversion Time
TTC
400 1000
ms
Data to CLK Setup
tDC
35
ns
6
CLK to Data Hold
tCDH
40
ns
6
CLK to Data Delay
tCDD
100
ns
6, 7, 8
CLK Low Time
tCL
285
ns
6
CLK High Time
tCH
285
ns
6
CLK Frequency
fCLK
DC
1.75
MHz
6
CLK Rise and Fall
tR, tF
500
ns
RST to CLK Setup
tCC
100
ns
6
CLK to RST Hold
tCCH
40
ns
6
RST Inactive Time
tCWH
125
ns
6, 9
CLK High to I/O High-Z
tCDZ
50
ns
6
RST Low to I/O High-Z
tRDZ
50
ns
6
Convert Pulse Width
tCNV
250 ns
500 ms
NV Write Cycle Time
tWR
10
50
ms
12
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Capacitance
CI
I/O Capacitance
CI/O
(-55°C to +125°C; VDD=2.7V to 5.5V)
MIN TYP MAX UNITS NOTES
5
pF
10
pF
11 of 13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]