STD60N3LH5 Просмотр технического описания (PDF) - STMicroelectronics

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STD60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

STMicroelectronics 

STD60N3LH5, STP60N3LH5, STU60N3LH5

Electrical characteristics

Table 6. Switching on/off (resistive load)

Symbol

Parameter

Test conditions

td(on)

tr

Turn-on delay time

Rise time

VDD=10 V, ID= 24 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

td(off)

tf

Turn-off delay time

Fall time

VDD=10 V, ID= 24 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

Min. Typ. Max. Unit

6

-

33

ns

-

ns

19

ns

-

-

4.2

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM

Source-drain current

Source-drain current (pulsed)(1)

VSD Forward on voltage

ISD=24 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=48 A,

di/dt =100 A/µs,

VDD=20 V, (Figure 15)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

48 A

-

192 A

-

1.1 V

25

ns

- 18.5

nC

1.5

A

Doc ID 14079 Rev 3

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