STU60N3LH5 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STU60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

STMicroelectronics 

Electrical characteristics

STD60N3LH5, STP60N3LH5, STU60N3LH5

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

Voltage

IDSS

IGSS

VGS(th)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS= 0

VDS = 30 V

VDS = 30 V,Tc = 125 °C

VGS = ± 22 V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 24 A

SMD version

VGS= 10 V, ID= 24 A

VGS= 5 V, ID= 24 A

SMD version

VGS= 5 V, ID= 24 A

Min. Typ. Max. Unit

30

V

1 µA

10 µA

±100 nA

1

1.8

3

V

0.0072 0.008 Ω

0.0076 0.0084 Ω

0.0088 0.011 Ω

0.0092 0.0114 Ω

Table 5. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Qgs1

Qgs2

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

RG Gate input resistance

Test conditions

VDS =25 V, f=1 MHz,

VGS=0

VDD=15 V, ID = 48 A

VGS =5 V

(Figure 14)

VDD=15 V, ID = 48 A

VGS =5 V

(Figure 19)

f=1 MHz gate bias

Bias= 0 test signal

level=20 mV

open drain

Min. Typ. Max. Unit

1350

pF

-

265

- pF

32

pF

8.8

nC

-

4.7

- nC

2.2

nC

2.2

nC

-

-

2.5

nC

-

1.1

-

Ω

4/16

Doc ID 14079 Rev 3

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