STD60N3LH5 Просмотр технического описания (PDF) - STMicroelectronics

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STD60N3LH5

N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

STMicroelectronics 

STD60N3LH5, STP60N3LH5, STU60N3LH5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage (VGS=0)

VDS Drain-source voltage (VGS = 0) @ TJMAX

VGS

ID (1)

Gate-Source voltage

Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

Derating factor

EAS (3) Single pulse avalanche energy

Tj

Operating junction temperature

Tstg Storage temperature

1. Limited by wire bonding

2. Pulse width limited by safe operating area

3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V

Value

30

35

± 22

48

42.8

192

60

0.4

160

-55 to 175

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-amb

Tj

Thermal resistance junction-case max

Thermal resistance junction-case max

Maximum lead temperature for soldering purpose

Value

2.5

100

275

Unit

V

V

V

A

A

A

W

W/°C

mJ

°C

Unit

°C/W

°C/W

°C

Doc ID 14079 Rev 3

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