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BUK475-60A

PowerMOS transistor Isolated version of BUK455-60A/B

Philips Electronics 

Philips Semiconductors

PowerMOS transistor

Isolated version of BUK455-60A/B

Product specification

BUK475-60A/B

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a

plastic full-pack envelope. The

device is intended for use in Switched

Mode Power Supplies (SMPS),

motor control, welding, DC/DC and

AC/DC converters, and in automotive

and general purpose switching

applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDS

ID

Ptot

Tj

RDS(ON)

BUK475

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

MAX.

-60A

60

21

30

150

0.038

MAX.

-60B

60

20

30

150

0.045

UNIT

V

A

W

˚C

Ω

PINNING - SOT186A

PIN

DESCRIPTION

1 gate

2 drain

3 source

case isolated

PIN CONFIGURATION

case

12 3

SYMBOL

d

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

VDS

VDGR

±VGS

Drain-source voltage

Drain-gate voltage

Gate-source voltage

-

-

RGS = 20 kΩ

-

-

-

ID

Drain current (DC)

Ths = 25 ˚C

-

ID

Drain current (DC)

Ths = 100 ˚C

-

IDM

Drain current (pulse peak value) Ths = 25 ˚C

-

Ptot

Total power dissipation

Tstg

Storage temperature

Tj

Junction temperature

Ths = 25 ˚C

-

-

- 55

-

-

THERMAL RESISTANCES

SYMBOL

Rth j-hs

Rth j-a

PARAMETER

Thermal resistance junction to

heatsink

Thermal resistance junction to

ambient

CONDITIONS

with heatsink compound

MAX.

60

60

30

-60A

21

13

84

-60B

20

12.6

80

30

150

150

UNIT

V

V

V

A

A

A

W

˚C

˚C

MIN. TYP. MAX. UNIT

-

- 4.17 K/W

-

55

- K/W

November 1996

1

Rev 1.200

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