MBR1645 Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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MBR1645 Datasheet PDF : 5 Pages
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SEMICONDUCTOR
MBR1645 Series RRooHHSS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
lF(AV) TC = 134°C, rated VR
Non-repetitive peak surge current
Following any rated load
5 μs sine or 3 μs rect.pulse condition and with rated
lFSM
VRRM applied
Surge applied at rated load condition half wave
single phase 60 Hz
VALUE UNIT
16
A
1800
A
150
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25°C, lAS = 3.6A, L = 3.7mH
24
mJ
Current decaying linearly to zero in 1 μs
lAR
Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE UNIT
Maximum forward voltage drop
VFM(1)
16A
16A
TJ = 25°C
TJ = 125°C
0.63
V
0.57
Maximum instantaneous reverse current
l
(1)
RM
TJ = 25°C
TJ = 125°C
Rated DC voltage
0.2
mA
40
Maximum junction capacitance
Typical series inductance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHZ) 25°C 1400
pF
LS Measured from top of terminal to mounting plane
8
nH
Maximum voltage rate of change
dV/dt Rated VR
10000 V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2%
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
TJ
Maximum storage temperature range
Tstg
TEST CONDITIONS
Maximum thermal resistance,
junction to case
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AC
VALUE UNIT
-65 to 150
°C
-65 to 175
1.5
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf . cm
(lbf . in)
MBR1645
www.nellsemi.com
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