MW7IC930NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC930NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 900 MHz

VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW,

10 μsec(on), 10% Duty Cycle

51

Ideal

50

f = 960 MHz

49

f = 920 MHz

48

47

Actual

46

f = 920 MHz

45

f = 960 MHz

44

f = 940 MHz

f = 940 MHz

43

42

41

9 10 11 12 13 14 15 16 17 18 19

Pin, INPUT POWER (dBm)

NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V

f

(MHz)

920

940

960

P1dB

Watts dBm

43

46.3

42

46.3

42

46.3

P3dB

Watts dBm

51

47.1

50

47

50

47

Test Impedances per Compression Level

f

(MHz)

Zsource

Ω

Zload

Ω

920

P1dB 55.82 + j15.71 4.54 + j1.15

940

P1dB 52.56 + j20.20 4.38 + j1.21

960

P1dB 49.18 + j25.00 5.04 + j1.15

Figure 12. Pulsed CW Output Power

versus Input Power @ 28 V

RF Device Data

Freescale Semiconductor

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

9

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