MW7IC930GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC930GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.

f

Zin

MHz

Ω

Zload

Ω

820

37.95 + j2.31

4.70 + j0.98

840

39.95 + j2.72

4.29 + j1.23

860

42.70 + j1.02

3.93 + j1.67

880

44.40 -- j1.38

3.63 + j2.15

900

46.25 -- j4.92

3.41 + j2.61

920

45.70 -- j8.41

3.14 + j3.05

940

45.46 -- j11.47

2.94 + j3.48

960

45.07 -- j15.19

2.85 + j3.90

980

43.49 -- j18.03

2.69 + j4.32

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 11. Series Equivalent Input and Load Impedance — 900 MHz

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

8

RF Device Data

Freescale Semiconductor

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