MW7IC930GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC930GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 900 MHz

38.5

VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA

38 IDQ2 = 285 mA, Single--Carrier W--CDMA

37.5

20

18

PAE

16

37

14

36.5

Gps 12

36

--40

--18

0.5

35.5

PARC

--42

--20

0

35

3.84 MHz Channel Bandwidth

34.5 Input Signal PAR = 7.5 dB @ 0.01%

34 Probability on CCDF

--44

--22

--0.5

IRL

--46

--24

--1

ACPR --48

--26

--1.5

33.5

--50

--28

--2

800 825 850 875 900 925 950 975 1000

f, FREQUENCY (MHz)

Figure 4. Output Peak--to--Average Ratio Compression (PARC)

Broadband Performance @ Pout = 3.2 Watts Avg.

--10

VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA

IDQ2 = 285 mA, Two--Tone Measurements

--20 (f1 + f2)/2 = Center Frequency of 940 MHz

IM3--U

--30

IM3--L

--40

IM5--U

--50

IM5--L

IM7--L

IM7--U

--60

1

10

100

TWO--TONE SPACING (MHz)

Figure 5. Intermodulation Distortion Products

versus Two--Tone Spacing

37.5

1

Gps

46

--26

37

0

PARC

--1 dB = 6.41 W

40

--30

36.5

--1

VDD = 28 Vdc

36

--2

IDQ1 = 106 mA

IDQ2 = 285 mA

f = 940 MHz

34

--34

--2 dB = 8.98 W

28

--38

--3 dB = 12.17 W

35.5

--3

22

--42

35

PAE

--4

Single--Carrier W--CDMA

3.84 MHz Channel Bandwidth

16

--46

Input Signal PAR = 7.5 dB @ 0.01%

ACPR

Probability on CCDF

34.5

--5

10

--50

2

5

8

11

14

Pout, OUTPUT POWER (WATTS)

Figure 6. Output Peak--to--Average Ratio

Compression (PARC) versus Output Power

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

6

RF Device Data

Freescale Semiconductor

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