MW7IC930GNR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MW7IC930GNR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 2 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate--Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IDSS

—

—

10

μAdc

IDSS

—

—

1

μAdc

IGSS

—

—

1

μAdc

Stage 2 — On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 74 μAdc)

VGS(th)

1.2

2

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ2 = 285 mA)

VGS(Q)

—

2.6

—

Vdc

Fixture Gate Quiescent Voltage (1)

(VDD = 28 Vdc, IDQ2 = 285 mA, Measured in Functional Test)

VGG(Q)

4.2

5.9

7.6

Vdc

Drain--Source On--Voltage

(VGS = 10 Vdc, ID = 740 mA)

VDS(on)

0.1

0.3

0.8

Vdc

Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.,

f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Power Gain

Gps

33

35.9

38

dB

Power Added Efficiency

PAE

14

16.5

—

%

Adjacent Channel Power Ratio

ACPR

—

--49.5

--46

dBc

Input Return Loss

IRL

—

--18.7

--9

dB

Typical Broadband Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 =

106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability

on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

Frequency

Gps (dB)

PAE (%)

ACPR (dBc)

IRL (dB)

920 MHz

36.6

16.1

--48.0

--19.9

940 MHz

36.8

16.7

--48.7

--20.8

960 MHz

36.6

17.3

--48.6

--19.7

1. VGG = 2.25 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally matched both on input and output.

3. Measurement made with device in straight lead configuration before any lead forming operation is applied.

(continued)

RF Device Data

Freescale Semiconductor

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

3

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