MW7IC930NR1 Просмотр технического описания (PDF) - Freescale Semiconductor

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производитель

MW7IC930NR1

RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor 

TYPICAL CHARACTERISTICS — 700 MHz

37.5

60

0

37

36.5 Gps

768 MHz

748 MHz

54

--5

48

--10

36 VDD = 28 Vdc

35.5 IDQ1 = 106 mA, IDQ2 = 285 mA

Single--Carrier W--CDMA, 3.84 MHz

728 MHz 42

--15

36

--20

35 Channel Bandwidth, Input Signal

30

--25

34.5

PAR = 7.5 dB @ 0.01%

Probability on CCDF

34

24

--30

748 MHz

18

--35

PAE

33.5

728 MHz

768 MHz

12

--40

33

32.5

1

ACPR

748 MHz

10

6

--45

728 MHz 0

--50

50

Pout, OUTPUT POWER (WATTS) AVG.

Figure 14. Single--Carrier W--CDMA Power Gain, Power Added

Efficiency and ACPR versus Output Power — 700 MHz

VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.

f

Zin

MHz

Ω

Zload

Ω

710

25.21 -- j1.21

8.57 + j2.52

720

33.76 + j5.36

8.52 + j2.46

730

38.78 + j1.40

8.44 + j2.34

740

40.14 -- j0.76

8.36 + j2.16

750

35.46 -- j1.15

8.30 + j2.00

760

34.65 -- j0.53

8.32 + j1.90

770

34.75 -- j0.43

8.31 + j1.86

780

36.20 + j0.81

8.27 + j1.98

790

36.18 + j1.33

8.23 + j2.12

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 15. Series Equivalent Input and Load Impedance — 700 MHz

RF Device Data

Freescale Semiconductor

MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1

11

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