MBR10100 Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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производитель
MBR10100 Datasheet PDF : 2 Pages
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Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
Tj = 25°C
VR = VRRM
IR
Tj = 125°C
VR = VRRM
IR
RthC
MBR10100
Kennwerte
< 100 µA
typ. 5 mA
< 2 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TC 50
100
150 [°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
102
[A]
Tj = 125°C
10
Tj = 25°C
1
10-1
IF
10-2
0
VF
0.4 0.6 [V] 1.0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
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