SF21G Просмотр технического описания (PDF) - Sangdest Microelectronic (Nanjing) Co., Ltd

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SF21G

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Sangdest Microelectronic (Nanjing) Co., Ltd 

Technical Data

Data Sheet N1641, Rev. B

SF21G-SF28G

Green Products

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol SF21G SF22G SF23G SF24G SF25G SF26G SF28G Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=55℃

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load (JEDEC

Method)

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current TA=25 ℃

at rated DC blocking voltage TA=100 ℃

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Junction Temperature

Storage Temperature Range

VRRM

VRMS

VDC

I(AV)

IFSM

VF

IR

Trr

CJ

RθJA

TJ

TSTG

50 100 150 200 300 400 600 V

35 70 105 140 210 280 420 V

50 100 150 200 300 400 600 V

2.0

A

75

A

0.95

1.25

1.7

V

5.0

50.0

µA

35

ns

60.0

30.0

pF

50.0

°C/W

-65 to +175

°C

-65 to +175

°C

Note: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted

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