ES3A Просмотр технического описания (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
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ES3A Datasheet PDF : 2 Pages
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MAKO SEMICONDUCTOR.,CO.LTD
SU R FA CE M O UNT R EC T IFIER
ES3A THRU ES3M
50V-1000V 3.0A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=55 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 3.0A DC
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Blocking Voltage
@TJ=100℃
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
ES3A
50
35
50
ES3B
100
70
100
I(AV)
ES3D
200
140
200
ES3G
400
280
400
3.0
ES3J
600
420
600
ES3K
800
560
800
ES3M
1000
700
1000
UNIT
V
V
V
A
IFSM
VF
IR
TRR
CJ
R JA
TJ
TSTG
0.95
70
125
1.25
5.0
100
35
20
-55 to +150
-55 to +150
1.70
45
A
V
μA
nS
pF
℃/W
℃
℃
NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient.
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MAKO SEMICONDUCTOR
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