1N4148(2002) Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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Компоненты Описание

производитель

1N4148
(Rev.:2002)

Silicon Planar Diodes

Diotec Semiconductor Germany  

1N 4148, 1N 4150, 1N 4151, 1N 4448

Characteristics, Tj = 25/C

Type

Typ

Forward voltage

Durchlaßspannung

1N 4148

VF [V]

<1

IF [mA]

10

1N 4150 0.54...0.62

1

0.66...0.74

10

0.76...0.86

50

0.82...0.92

100

0.87...1.00

200

1N 4151

<1

50

1N 4448 0.62...0.72

5

<1

100

Leakage current

Sperrstrom

Kennwerte, Tj = 25/C

Rev. recovery time 1)

Sperrverzugszeit 1)

IR [nA]

< 25

< 5.000

< 50.000

< 100

< 100.000

VR [V]

20

75

20 (Tj = 150/C)

50

50 (Tj = 150/C)

trr [ns]

<4

<4

< 50

50

<2

< 50.000 50 (Tj = 150/C)

< 20

25

<4

< 5.000

75

< 50.000 20 (Tj = 150/C)

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA < 0.3 K/mW 2)

1) IF = 10 mA über / through IR = 10 mA bis / to IR = 1 mA, UR = 6 V, RL = 100 S

2) Valid, if leads are kept at TA = 25/C at a distance of 5 mm from case

Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf TA = 25/C gehalten werden

01.10.2002

35

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