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MBR30200CT Просмотр технического описания (PDF) - Inchange Semiconductor

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Компоненты Описание
производитель
MBR30200CT
Iscsemi
Inchange Semiconductor Iscsemi
MBR30200CT Datasheet PDF : 2 Pages
1 2
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30200CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
2.0
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle1%)
SYMBOL
PARAMETER
CONDITIONS
IF= 15A ; Tc= 25
VF
Maximum Instantaneous Forward Voltage
IF= 15A ; Tc= 125
VR= VRWM;Tc= 25
IR
Maximum Instantaneous Reverse Current
VR= VRWM;Tc= 125
MAX
0.9
0.7
1
6
UNIT
V
mA
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