MBR30200CT Просмотр технического описания (PDF) - Inchange Semiconductor

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MBR30200CT

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

MBR30200CT

FEATURES

·Plastic material used carriers Unerwriter Laboratory

·Metal silicon rectifier, majonty carrier conduction

·Low Power Loss,High Efficiency

·Guard ring for transient protection

·High Surge Capability,High Current Capability

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·For use in low voltage ,high frequency inverters,free

wheeling and polarity protection applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VRRM

VRWM

VR

VR(RMS)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltag

VALUE UNIT

200

V

140

V

IF(AV)

IFSM

TJ

Average Rectified Forward Current

30

A

Nonrepetitive Peak Surge Current

8.3ms single half sine-wave superimposed 150

A

on rated load conditions

Junction Temperature

-55~150 ℃

Tstg

Storage Temperature Range

-55~150 ℃

dv/dt Voltage Rate of Change (Rated VR)

10,000 V/μs

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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