2N6282 Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2N6282
ON Semiconductor
2N6282 Datasheet PDF : 6 Pages
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2N6282 thru 2N6284 2N6285 thru 2N6287
NPN
2N6282, 2N6283, 2N6284
PNP
2N6285, 2N6286, 2N6287
20,000
10,000
7000
5000
3000
2000
VCE = 3.0 V
TJ = 150°C
25°C
1000
700
– 55°C
30,000
20,000
10,000
7000
5000
3000
2000
1000
VCE = 3.0 V
TJ = 150°C
25°C
– 55°C
500
300
200
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
700
500
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 5.0 A
10 A
15 A
2.2
3.0
2.6
IC = 5.0 A
10 A
2.2
TJ = 25°C
15 A
1.8
1.8
1.4
1.4
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30 50
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0
2.0
VBE(sat) @ IC/IB = 250
1.5
1.5 VBE(sat) @ IC/IB = 250
1.0
VBE @ VCE = 3.0 V
0.5
0.2 0.3 0.5 0.7 1.0
VCE(sat) @ IC/IB = 250
2.0 3.0 5.0 7.0 10
20
1.0 VBE @ VCE = 3.0 V
0.5
0.2 0.3 0.5 0.7 1.0
VCE(sat) @ IC/IB = 250
2.0 3.0 5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 12. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
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